HE1837-C-L-521 by Raytheon Company - Receive a Competitive Quote
| Part Number: HE1837-C-L-521 | Alternate P/N: HE1837CL521 | Manufacturer: Raytheon Company | NSN : 5962-01-377-1141 | Item Name : Microcircuit Memory | CAGE Code: 62458 | FSC : 5962 Microcircuits Electronic | ||
We’re excited to announce that HE1837-C-L-521 NSN part is now available and ready for immediate shipping. Part number HE1837-C-L-521 is a Microcircuit Memory manufactured by Raytheon Company with NSN 5962013771141. Are you interested in a quick and competitive quote for this part?
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NSN Information for Part Number HE1837-C-L-521 with NSN 5962-01-377-1141, 5962013771141
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-377-1141 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013771141 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| ROM/PROM | 5 | 1 | 5 |
Characteristics Data of NSN 5962-01-377-1141, 5962013771141
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQX | Current Rating Per Characteristic | 10.00 MILLIAMPERES MAXIMUM SUPPLY |
| CZEQ | Time Rating Per Chacteristic | 450.00 NANOSECONDS MAXIMUM ACCESS |
| CQZP | Input Circuit Pattern | 13 INPUT |
| CQSJ | Inclosure Material | CERAMIC |
| CBBL | Features Provided | ELECTROSTATIC SENSITIVE AND W/BUFFERED OUTPUT AND HIGH IMPEDANCE AND 3-STATE OUTPUT AND W/CLOCK AND MONOLITHIC |
| ADAT | Body Width | 0.450 INCHES MAXIMUM |
| TTQY | Terminal Type And Quantity | 28 LEADLESS |
| CWSG | Terminal Surface Treatment | SOLDER |
| AFGA | Operating Temp Range | -55.0 TO 125.0 DEG CELSIUS |
| ADAQ | Body Length | 0.450 INCHES NOMINAL |
| ADAU | Body Height | 0.110 INCHES MAXIMUM |
| AGAV | End Item Identification | 5820-01-306-3838 RECEIVER-TRANSMITTER, RADIO |
| TEST | Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| MRC | Decoded Requirement | Clear Text Reply |
| CQSZ | Inclosure Configuration | LEADLESS FLAT PACK |
| AFJQ | Storage Temp Range | -65.0 TO 125.0 DEG CELSIUS |
| CQWX | Output Logic Form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZER | Memory Device Type | ROM |
| CZEN | Voltage Rating And Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.2 VOLTS MAXIMUM POWER SOURCE |
