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IRF120 by Infineon Technologies Americas Corp - Receive a Competitive Quote

We’re excited to announce that IRF120 NSN part is now available and ready for immediate shipping. Part number IRF120 is a Transistor manufactured by Infineon Technologies Americas Corp with NSN 5961011686505. Are you interested in a quick and competitive quote for this part?

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Just NSN Parts, owned and operated by ASAP Semiconductor, is a leading distributor of NSN (National Stock Number) parts, new and obsolete. Because of our dedication to quality, we’re the only independent distributor in the United States with a strict No China Sourcing Pledge. We’re also an AS9120B, ISO 9001:2015 certified, and FAA AC 0056B accredited member of the Aviation Suppliers Association (ASA). Our vast and comprehensive inventory of over 2 billion parts coupled with our shipping facilities in Washington, Oregon, California, New Maxico, Nevada, Arizona, Illinois, Minnesota, Pennsylvania, and New York, allow us to offer you some of the fastest delivery times in the industry.

If you’d like to learn more about NSN part number IRF120 Transistor, feel free to call us at our toll-free number, +1-714-705-4780, or email us at sales@justnsnparts.com. And, if you’d like to stay informed on new inventory or any promotions, feel free to download the ASAP Semiconductor App from Google Play or the App Store.

NSN Information for Part Number IRF120 with NSN 5961-01-168-6505, 5961011686505

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5961-01-168-6505

Item PartTypeName:

TRANSISTOR

59610116865050NB
CIICHCCESDPMICCriticalityENAC
UBA
Part NumberISCRNVCRNCCHCCMSDSSADC
V1085038E

Characteristics Data of NSN 5961-01-168-6505, 5961011686505

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALMETAL AND CERAMIC
ABHPOVERALL LENGTH1.563 INCHES MAXIMUM
ABKWOVERALL HEIGHT0.350 INCHES NOMINAL
ABMKOVERALL WIDTH1.050 INCHES MAXIMUM
AKPVMOUNTING FACILITY QUANTITY2
ALASINTERNAL CONFIGURATIONFIELD EFFECT
ALAZJOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-204AA
AXGYMOUNTING METHODUNTHREADED HOLE
CTMZSEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM BREAKDOWN VOLTAGE,DRAIN-TO-SOURCE,WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
CTQXCURRENT RATING PER CHARACTERISTIC8.00 AMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
CTRDPOWER RATING PER CHARACTERISTIC40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS JUNCTION
TTQYTERMINAL TYPE AND QUANTITY2 PIN AND 1 CASE