NSN 5962-01-502-5549 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-502-5549 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 015025549 |
| NCB Code: USA (01) |
| Manufacturers: Integrated Device Technology Inc , Northrop Grumman Systems Corporation |
Manufacturer's List for NSN 5962-01-502-5549, 5962015025549
Part Number Related To NSN 5962-01-502-5549, 5962015025549
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| IDT71V547S90PF | 5962-01-502-5549 | microcircuit memory | Avl | RFQ |
| 844491-1 | 5962-01-502-5549 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962015025549
| MRC | Criteria | Characteristic |
|---|---|---|
| CZER | Memory Device Type | RAM |
| AEHX | Maximum Power Dissipation Rating | 2.0 WATTS |
| CXCY | Part Name Assigned By Controlling Agency | 128K X 36, 3.3V SYNCHRONOUS SRAM WITH ZBT FEATURE, BURST COUNTER AND FLOW-THROUGH OUTPUTS |
| CBBL | Features Provided | ELECTROSTATIC SENSITIVE AND HIGH SPEED AND SYNCHRONOUS |
| CQSJ | Inclosure Material | PLASTIC |
| AFGA | Operating Temp Range | +0.0 TO 70.0 DEG CELSIUS |
| CQSZ | Inclosure Configuration | LEADLESS FLAT PACK |
| AFJQ | Storage Temp Range | -65.0 TO 150.0 DEG CELSIUS |
| MRC | Decoded Requirement | Clear Text Reply |
| CZEN | Voltage Rating And Type Per Characteristic | -0.5 VOLTS MINIMUM INPUT AND 8.0 VOLTS MAXIMUM INPUT |
| TTQY | Terminal Type And Quantity | 100 FLAT LEADS |
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