NSN 5962-01-461-4420 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-461-4420 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 014614420 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , White Electronic Designs Corpora , Logic Devices Incorporated , Austin Semiconductor Inc |
Manufacturer's List for NSN 5962-01-461-4420, 5962014614420
| dla land and maritime | white electronic designs corpora | logic devices incorporated |
| austin semiconductor inc |
Part Number Related To NSN 5962-01-461-4420, 5962014614420
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 5962-89598 | 5962-01-461-4420 | microcircuit memory | Avl | RFQ |
| 5962-8959819MUA | 5962-01-461-4420 | microcircuit memory | Avl | RFQ |
| 5962-8959819MUB | 5962-01-461-4420 | microcircuit memory | Avl | RFQ |
| 5962-8959819MUX | 5962-01-461-4420 | microcircuit memory | Avl | RFQ |
| ED188130LP35LB | 5962-01-461-4420 | microcircuit memory | Avl | RFQ |
| L7C109KZMB35 | 5962-01-461-4420 | microcircuit memory | Avl | RFQ |
| MT5C1008EC-35L883C | 5962-01-461-4420 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962014614420
| MRC | Criteria | Characteristic |
|---|---|---|
| FEAT | Special Features | CIRCUIT FUNCTION 128K X 8LOW POWWER CMOS SRAM DUAL CE / ACCESS TIME 35 NS |
| AEHX | Maximum Power Dissipation Rating | 1.0 WATTS |
| TEST | Test Data Document | 96906-MIL-STD-833 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| MRC | Decoded Requirement | Clear Text Reply |
| CWSG | Terminal Surface Treatment | SOLDER |
| CBBL | Features Provided | MONOLITHIC AND LOW POWER |
| CQSZ | Inclosure Configuration | LEADLESS FLAT PACK |
| AFGA | Operating Temp Range | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | Storage Temp Range | -65.0 TO 150.0 DEG CELSIUS |
| CXCY | Part Name Assigned By Controlling Agency | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8 STATIC RANDOM ACCESS MEMORY (SRAM) LOW POWER MONOLITHIC SILICON |
| TTQY | Terminal Type And Quantity | 32 CASE |
| AGAV | End Item Identification | A06A1176 F15A E/I CAGE 67268 |
| CQWX | Output Logic Form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZEN | Voltage Rating And Type Per Characteristic | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
| CZER | Memory Device Type | RAM |
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