NSN 5962-01-380-0156 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-380-0156 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013800156 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Cypress Semiconductor Corporatio , Atmel Corporation , Raytheon Company |
Manufacturer's List for NSN 5962-01-380-0156, 5962013800156
Part Number Related To NSN 5962-01-380-0156, 5962013800156
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| ROM PROM FAMILY 135 | 5962-01-380-0156 | microcircuit memory | Avl | RFQ |
| PALC22V10-30DMB | 5962-01-380-0156 | microcircuit memory | Avl | RFQ |
| AT22V10 30GM 883 | 5962-01-380-0156 | microcircuit memory | Avl | RFQ |
| 5962-8867002LA | 5962-01-380-0156 | microcircuit memory | Avl | RFQ |
| 1711246-2 | 5962-01-380-0156 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013800156
| MRC | Criteria | Characteristic |
|---|---|---|
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CZEQ | TIME RATING PER CHACTERISTIC | 30.00 NANOSECONDS MAXIMUM ACCESS |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| CZER | MEMORY DEVICE TYPE | PAL |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.2 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND BIPOLAR AND PROGRAMMED |
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