NSN 5962-01-333-2528 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-333-2528 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013332528 |
| NCB Code: USA (01) |
| Manufacturers: Nimikkeistokeskus Ncb Finland , Microchip Technology Incorporated , Dla Land And Maritime , Lockheed Martin Corporation , Advanced Micro Devices Inc , Austin Semiconductor Inc , Atmel Corporation , Texas Instruments Inc , Waferscale Integration Inc |
Manufacturer's List for NSN 5962-01-333-2528, 5962013332528
Part Number Related To NSN 5962-01-333-2528, 5962013332528
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 10129514 | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
| 27C512 20MR K | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
| 5962-87648 | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
| 5962-8764802BYA | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
| 5962-8764802BYB | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
| 5962-8764802BYX | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
| 5962-8764802YA | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
| 5962-8764802YB | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
| 5962-8764802YX | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
| 77A110867P001 | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
| AM27C512-200 BUA | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
| AS57C512-20ECM | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
| AT27C512 20LM 88 | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
| AT27C512R-20LM 883 | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
| ROM/PROM | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
| SL127 | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
| SMJ27C512-FM | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
| WS27C512L-20CMB | 5962-01-333-2528 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013332528
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAT | BODY WIDTH | 0.442 INCHES MINIMUM AND 0.458 INCHES MAXIMUM |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 60.00 MILLIAMPERES MAXIMUM SUPPLY |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 LEADLESS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 26 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | C-12 MIL-M-38510 |
| ADAU | BODY HEIGHT | 0.060 INCHES MINIMUM AND 0.120 INCHES MAXIMUM |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEQ | TIME RATING PER CHACTERISTIC | 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| ADAQ | BODY LENGTH | 0.540 INCHES MINIMUM AND 0.560 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 350.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| CZER | MEMORY DEVICE TYPE | EPROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
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