NSN 5962-01-306-5562 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-306-5562 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013065562 |
| NCB Code: USA (01) |
| Manufacturers: Xicor Inc , Dla Land And Maritime , Seeq Technology Inc , Atmel Corporation , Honeywell Intl Inc , Safran , Nimikkeistokeskus Ncb Finland |
Manufacturer's List for NSN 5962-01-306-5562, 5962013065562
| xicor inc | dla land and maritime | seeq technology inc |
| atmel corporation | honeywell intl inc | safran |
| nimikkeistokeskus ncb finland |
Part Number Related To NSN 5962-01-306-5562, 5962013065562
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| X28C256DMB-25 | 5962-01-306-5562 | microcircuit memory | Avl | RFQ |
| ROM/PROM | 5962-01-306-5562 | microcircuit memory | Avl | RFQ |
| DM28C256-250 B | 5962-01-306-5562 | microcircuit memory | Avl | RFQ |
| AT28C256 25DM 883 | 5962-01-306-5562 | microcircuit memory | Avl | RFQ |
| 8764902XX | 5962-01-306-5562 | microcircuit memory | Avl | RFQ |
| 8502736-417 | 5962-01-306-5562 | microcircuit memory | Avl | RFQ |
| 5962-8852503XX | 5962-01-306-5562 | microcircuit memory | Avl | RFQ |
| 5962-8852503XB | 5962-01-306-5562 | microcircuit memory | Avl | RFQ |
| 5962-8852503XA | 5962-01-306-5562 | microcircuit memory | Avl | RFQ |
| 5962-88525 | 5962-01-306-5562 | microcircuit memory | Avl | RFQ |
| 5962-8764903XX | 5962-01-306-5562 | microcircuit memory | Avl | RFQ |
| 14521420-2 | 5962-01-306-5562 | microcircuit memory | Avl | RFQ |
| 10133848 | 5962-01-306-5562 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013065562
| MRC | Criteria | Characteristic |
|---|---|---|
| AGAV | END ITEM IDENTIFICATION | 1270-01-142-2855 TARGET DESIGNAT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| CZEQ | TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | EEPROM |
| ADAU | BODY HEIGHT | 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| CQZP | INPUT CIRCUIT PATTERN | 26 INPUT |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ERASABLE |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 80.00 MILLIAMPERES NOMINAL TOTAL SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 6.25 VOLTS MAXIMUM TOTAL SUPPLY |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
