NSN 5962-01-300-0495 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-300-0495 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013000495 |
| NCB Code: USA (01) |
| Manufacturers: Waferscale Integration Inc , Texas Instruments Inc , Dla Land And Maritime , Advanced Micro Devices Inc , Microchip Technology Incorporated , Rockwell Collins Aerospace |
Manufacturer's List for NSN 5962-01-300-0495, 5962013000495
| waferscale integration inc | texas instruments inc | dla land and maritime |
| advanced micro devices inc | microchip technology incorporated | rockwell collins aerospace |
Part Number Related To NSN 5962-01-300-0495, 5962013000495
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| WS27C128L-25DMB | 5962-01-300-0495 | microcircuit memory | Avl | RFQ |
| SMJ27C128-25JM | 5962-01-300-0495 | microcircuit memory | Avl | RFQ |
| ROM/PROM | 5962-01-300-0495 | microcircuit memory | Avl | RFQ |
| AM27C128 250 BXA | 5962-01-300-0495 | microcircuit memory | Avl | RFQ |
| 5962-8766106XX | 5962-01-300-0495 | microcircuit memory | Avl | RFQ |
| 5962-8766106XB | 5962-01-300-0495 | microcircuit memory | Avl | RFQ |
| 5962-8766106XA | 5962-01-300-0495 | microcircuit memory | Avl | RFQ |
| 5962-8766106BXX | 5962-01-300-0495 | microcircuit memory | Avl | RFQ |
| 5962-8766106BXB | 5962-01-300-0495 | microcircuit memory | Avl | RFQ |
| 5962-8766106BXA | 5962-01-300-0495 | microcircuit memory | Avl | RFQ |
| 5962-87661 | 5962-01-300-0495 | microcircuit memory | Avl | RFQ |
| 27C128-25BXA | 5962-01-300-0495 | microcircuit memory | Avl | RFQ |
| 258-0197-010 | 5962-01-300-0495 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013000495
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND W/ENABLE AND ULTRAVIOLET ERASABLE |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.165 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 300.0 MILLIWATTS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 17 INPUT |
| CZEQ | TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
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