NSN 5962-01-287-2391 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-287-2391 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012872391 |
| NCB Code: USA (01) |
| Manufacturers: Integrated Device Technology Inc , Raytheon Company , Cypress Semiconductor Corporatio , Dla Land And Maritime , Ferranti Technologies Ltd , Ferranti International Plc |
Manufacturer's List for NSN 5962-01-287-2391, 5962012872391
| integrated device technology inc | raytheon company | cypress semiconductor corporatio |
| dla land and maritime | ferranti technologies ltd | ferranti international plc |
Part Number Related To NSN 5962-01-287-2391, 5962012872391
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| IDT7202SA120DM | 5962-01-287-2391 | microcircuit memory | Avl | RFQ |
| IDT7202SA120DB | 5962-01-287-2391 | microcircuit memory | Avl | RFQ |
| IDT7202S120DB | 5962-01-287-2391 | microcircuit memory | Avl | RFQ |
| H990702-001B | 5962-01-287-2391 | microcircuit memory | Avl | RFQ |
| CY7C424-65DMB | 5962-01-287-2391 | microcircuit memory | Avl | RFQ |
| 5962-9158501MYX | 5962-01-287-2391 | microcircuit memory | Avl | RFQ |
| 28896-0165-814 | 5962-01-287-2391 | microcircuit memory | Avl | RFQ |
| 28896-0165-814 | 5962-01-287-2391 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012872391
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.380 INCHES MINIMUM AND 1.420 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.560 INCHES MINIMUM AND 0.600 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.040 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/155.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND MONOLITHIC |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 140.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 140.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
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