NSN 5962-01-279-3738 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-279-3738 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012793738 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Cypress Semiconductor Corporatio , 2 Mb Distribution |
Manufacturer's List for NSN 5962-01-279-3738, 5962012793738
Part Number Related To NSN 5962-01-279-3738, 5962012793738
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| ROM/PROM | 5962-01-279-3738 | microcircuit memory | Avl | RFQ |
| CY7C261-45WMB | 5962-01-279-3738 | microcircuit memory | Avl | RFQ |
| CY7C261-45WMB | 5962-01-279-3738 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012793738
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.230 INCHES MINIMUM AND 1.280 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.175 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 660.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND PROGRAMMABLE AND HIGH SPEED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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