NSN 5962-01-264-0761 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-264-0761 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012640761 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Advanced Micro Devices Inc , 2 Mb Distribution , National Semiconductor Corporation , Thomson Sintra Activites Sous , Thales Underwater Systems Uk , Philips Semiconductors Inc |
Manufacturer's List for NSN 5962-01-264-0761, 5962012640761
| dla land and maritime | advanced micro devices inc | 2 mb distribution |
| national semiconductor corporation | thomson sintra activites sous | thales underwater systems uk |
| philips semiconductors inc |
Part Number Related To NSN 5962-01-264-0761, 5962012640761
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| ROM PROM HEAD 241 | 5962-01-264-0761 | microcircuit memory | Avl | RFQ |
| AM27S49A BJA | 5962-01-264-0761 | microcircuit memory | Avl | RFQ |
| AM27S49A BJA | 5962-01-264-0761 | microcircuit memory | Avl | RFQ |
| 93Z5665DMQB55 | 5962-01-264-0761 | microcircuit memory | Avl | RFQ |
| 91604432 | 5962-01-264-0761 | microcircuit memory | Avl | RFQ |
| 91604432 | 5962-01-264-0761 | microcircuit memory | Avl | RFQ |
| 82HS641A BJA | 5962-01-264-0761 | microcircuit memory | Avl | RFQ |
| 8200902JX | 5962-01-264-0761 | microcircuit memory | Avl | RFQ |
| 8200902JB | 5962-01-264-0761 | microcircuit memory | Avl | RFQ |
| 8200902JA | 5962-01-264-0761 | microcircuit memory | Avl | RFQ |
| 82009 | 5962-01-264-0761 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012640761
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.04 WATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND 3-STATE OUTPUT AND MONOLITHIC |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| FEAT | SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEMS |
| NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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