NSN 5962-01-198-0461 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-198-0461 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011980461 |
| NCB Code: USA (01) |
| Manufacturers: Integrated Device Technology Inc , Sgs Thomson , Northrop Grumman Systems Corporation , Fujitsu Microelectronics Ltd , Cypress Semiconductor Corporatio , Bennett Marine |
Manufacturer's List for NSN 5962-01-198-0461, 5962011980461
| integrated device technology inc | sgs thomson | northrop grumman systems corporation |
| fujitsu microelectronics ltd | cypress semiconductor corporatio | bennett marine |
Part Number Related To NSN 5962-01-198-0461, 5962011980461
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| SCD0304 | 5962-01-198-0461 | microcircuit memory | Avl | RFQ |
| IMS1420S-55M | 5962-01-198-0461 | microcircuit memory | Avl | RFQ |
| IMS1420-55 | 5962-01-198-0461 | microcircuit memory | Avl | RFQ |
| 585R727H09 | 5962-01-198-0461 | microcircuit memory | Avl | RFQ |
| 585R727H09 | 5962-01-198-0461 | microcircuit memory | Avl | RFQ |
| 585R727H09 | 5962-01-198-0461 | microcircuit memory | Avl | RFQ |
| 585R727H09 | 5962-01-198-0461 | microcircuit memory | Avl | RFQ |
| 585R727H09 | 5962-01-198-0461 | microcircuit memory | Avl | RFQ |
| 585R727H09 | 5962-01-198-0461 | microcircuit memory | Avl | RFQ |
| 0304 | 5962-01-198-0461 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011980461
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 17 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 120.00 MILLIAMPERES MAXIMUM SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM DELAY |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
