NSN 5962-01-195-1230 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-195-1230 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011951230 |
| NCB Code: USA (01) |
| Manufacturers: Intersil Corporation |
Manufacturer's List for NSN 5962-01-195-1230, 5962011951230
Part Number Related To NSN 5962-01-195-1230, 5962011951230
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| IM 6312AMD | 5962-01-195-1230 | microcircuit memory | Avl | RFQ |
| HM1-6312A-8 | 5962-01-195-1230 | microcircuit memory | Avl | RFQ |
| 1M6312AMD-63S210 | 5962-01-195-1230 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011951230
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.880 INCHES MINIMUM AND 0.910 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.285 INCHES MINIMUM AND 0.295 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND ELECTROSTATIC SENSITIVE AND LOW POWER AND HIGH SPEED AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.0 VOLTS MINIMUM POWER SOURCE AND 11.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
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