NSN 5962-01-154-6495 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-154-6495 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011546495 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Northrop Grumman Systems Corporation |
Manufacturer's List for NSN 5962-01-154-6495, 5962011546495
Part Number Related To NSN 5962-01-154-6495, 5962011546495
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| DH9601 | 5962-01-154-6495 | microcircuit memory | Avl | RFQ |
| AM91L12ADMB | 5962-01-154-6495 | microcircuit memory | Avl | RFQ |
| 583R449H02 | 5962-01-154-6495 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011546495
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1000.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND HIGH SPEED AND POSITIVE OUTPUTS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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