NSN 5962-01-117-7026 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-117-7026 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011177026 |
| NCB Code: USA (01) |
| Manufacturers: National Semiconductor Corporation , Intel Corp , Intersil Corporation , Msis Semiconductor Inc , Advanced Micro Devices Inc , Northrop Grumman Systems Corporation , Rochester Electronics Llc , Lockheed Martin Corporation |
Manufacturer's List for NSN 5962-01-117-7026, 5962011177026
Part Number Related To NSN 5962-01-117-7026, 5962011177026
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| MM2102AJ 4 883 | 5962-01-117-7026 | microcircuit memory | Avl | RFQ |
| MD8102A-4 B | 5962-01-117-7026 | microcircuit memory | Avl | RFQ |
| MC2102A-4 | 5962-01-117-7026 | microcircuit memory | Avl | RFQ |
| IM7552SEL | 5962-01-117-7026 | microcircuit memory | Avl | RFQ |
| D8102A-4 | 5962-01-117-7026 | microcircuit memory | Avl | RFQ |
| CM2102A-4 | 5962-01-117-7026 | microcircuit memory | Avl | RFQ |
| AM9102BDM | 5962-01-117-7026 | microcircuit memory | Avl | RFQ |
| AM9102ADM | 5962-01-117-7026 | microcircuit memory | Avl | RFQ |
| AM9102 BDM | 5962-01-117-7026 | microcircuit memory | Avl | RFQ |
| 971224-221 | 5962-01-117-7026 | microcircuit memory | Avl | RFQ |
| 839015-014 | 5962-01-117-7026 | microcircuit memory | Avl | RFQ |
| 2102AJ R | 5962-01-117-7026 | microcircuit memory | Avl | RFQ |
| 1U10061-101A | 5962-01-117-7026 | microcircuit memory | Avl | RFQ |
| 16007758 | 5962-01-117-7026 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011177026
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 260.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 1 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS MAXIMUM TOTAL SUPPLY |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MILSTD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
