NSN 5962-01-112-2727 of Microcircuit Memory - Product Details
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Alternative NSN: 5962-01-112-2727 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011122727 |
NCB Code: USA (01) |
Manufacturers: Synertek , Dla Land And Maritime , Advanced Micro Devices Inc , Lockheed Martin Corporation , Raytheon Company , Warner Robins Air Logistics Center , Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems , Sypris Electronics Llc , Moog Inc |
Manufacturer's List for NSN 5962-01-112-2727, 5962011122727
Part Number Related To NSN 5962-01-112-2727, 5962011122727
Part No | NSN | Item Name | QTY | RFQ |
---|---|---|---|---|
SYMC2101-1-883B | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
SYM2101-1C10253 | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
SYM2101-1C0253 | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
DMS 88016B | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
C2101 1 883B | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
C10736-1 | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
AM9101CMB | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
AM9101CDMB | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
AM9101C DMC | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
911726-2 | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
8525287 | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
6010445-001 | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
34031040-001 | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
129-415-0004-05 | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011122727
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.060 INCHES MINIMUM AND 1.110 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.380 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.180 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND LOW POWER AND W/DISABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 15 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | RAM |
TEST | TEST DATA DOCUMENT | 81755-C10736 DRAWING THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
TTQY | TERMINAL TYPE AND QUANTITY | 22 PRINTED CIRCUIT |