NSN 5962-01-110-7712 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-110-7712 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011107712 |
| NCB Code: USA (01) |
| Manufacturers: General Semiconductor Industries Inc , Northrop Grumman Systems Corporation |
Manufacturer's List for NSN 5962-01-110-7712, 5962011107712
Part Number Related To NSN 5962-01-110-7712, 5962011107712
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| RA-3-4256 | 5962-01-110-7712 | microcircuit memory | Avl | RFQ |
| GM820AGF1 | 5962-01-110-7712 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011107712
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.245 INCHES MINIMUM AND 1.255 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.150 INCHES NOMINAL |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 0.0 TO 70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND 3-STATE OUTPUT AND HIGH SPEED |
| CQSJ | INCLOSURE MATERIAL | PLASTIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 15 INPUT |
| CRHL | BIT QUANTITY | 1024 |
| CSWJ | WORD QUANTITY | 256 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 8.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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