NSN 5962-01-093-6160 of Microcircuit Memory - Product Details
Just NSN Parts, owned and operated by ASAP Semiconductor, is an industry-leading distributor of NSN 5962-01-093-6160 parts applicable in the aviation and defense industries. We aim to simplify the NSN 5962-01-093-6160 parts procurement process by enabling our customers to search through our inventory quickly and efficiently. Type in your desired NSN 5962-01-093-6160 part number such as S82S191I 883B, ROM/PROM, ROM PROM HEAD 029, R29683ASMB, R29681SMB into our search engine and, in a matter of seconds, available stock will appear.
We pride ourselves on our attention to detail and focus on quality control. We are FAA AC 0056B accredited and AS9120B, ISO 9001:2015 certified. We offer our customers a personalized and reliable service that will change your parts procurement process. If you would like to receive a quote today, fill out a request for quote form today.
| Alternative NSN: 5962-01-093-6160 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010936160 |
| NCB Code: USA (01) |
| Manufacturers: Philips Semiconductors Inc , Dla Land And Maritime , Fairchild Semiconductor Corp , Military Specifications , International Electric Co , Intel Corp , Advanced Micro Devices Inc , Raytheon Company , National Semiconductor Corporation , Thales Sa , Lockheed Martin Corporation , Hamilton Sundstrand Corporation , Boeing Company The |
Manufacturer's List for NSN 5962-01-093-6160, 5962010936160
Part Number Related To NSN 5962-01-093-6160, 5962010936160
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| S82S191I 883B | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| ROM/PROM | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| ROM PROM HEAD 029 | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| R29683ASMB | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| R29681SMB | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| R29681ASMB | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| N82S191N | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| MIL-M-38510/210 | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| MD3636 | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| M38510/21002BJX | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| M38510/21002BJB | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| M38510/21002BJA | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| M3636B-1 | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| JM38510/21002BJX | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| JAN-M38510/21002BJX | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| HM1-76161-5 | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| G134663-2 | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| DM77S191J 883B | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| D3636B1 | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| AM27S291ADC | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| AM27S191DCB | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| AM27S191APC | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| 99116292 | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| 82S191 | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| 7909151-06 | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| 7908628-06 | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| 7907566-02 | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| 5E8971 344-0014 | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| 5962-3821002BJX | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| 5962-3821002BJB | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| 5962-3821002BJA | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| 477-1690-001 | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| 3636B-1 | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
| 000-8003-983 | 5962-01-093-6160 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962010936160
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.02 WATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND SCHOTTKY AND W/BUFFERED OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/21 GOVERNMENT SPECIFICATION |
Get More Relevant NSN for NSN 5962-01-093-6160, 5962010936160
