NSN 5962-01-087-2325 of Microcircuit Memory - Product Details
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Alternative NSN: 5962-01-087-2325 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 010872325 |
NCB Code: USA (01) |
Manufacturers: Dla Land And Maritime , Intel Corp , Mcdonnell Douglas Helicopter Co Inc , Boeing Company The , Lockheed Martin Corporation , Northrop Grumman Systems Corporation , Aai Corporation |
Manufacturer's List for NSN 5962-01-087-2325, 5962010872325
dla land and maritime | intel corp | mcdonnell douglas helicopter co inc |
boeing company the | lockheed martin corporation | northrop grumman systems corporation |
aai corporation |
Part Number Related To NSN 5962-01-087-2325, 5962010872325
Part No | NSN | Item Name | QTY | RFQ |
---|---|---|---|---|
ROM/PROM | 5962-01-087-2325 | microcircuit memory | Avl | RFQ |
MD8755A B | 5962-01-087-2325 | microcircuit memory | Avl | RFQ |
HS5046-5501 | 5962-01-087-2325 | microcircuit memory | Avl | RFQ |
HS5046 5501 | 5962-01-087-2325 | microcircuit memory | Avl | RFQ |
DMS84018B | 5962-01-087-2325 | microcircuit memory | Avl | RFQ |
C8755A | 5962-01-087-2325 | microcircuit memory | Avl | RFQ |
77A103124P001 | 5962-01-087-2325 | microcircuit memory | Avl | RFQ |
638A652H01 | 5962-01-087-2325 | microcircuit memory | Avl | RFQ |
58139-92019-46 | 5962-01-087-2325 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962010872325
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.980 INCHES MINIMUM AND 2.020 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.570 INCHES MINIMUM AND 0.600 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.070 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.5 WATTS |
AFGA | OPERATING TEMP RANGE | 0.0 TO 70.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | COMPUTER CONTROL,REFERENCE DESIGNATOR,U82 |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND BIDIRECTIONAL AND W/ENABLE AND RESETTABLE AND PROGRAMMABLE AND PROGRAMMED AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
CRHL | BIT QUANTITY | 16384 |
CSWJ | WORD QUANTITY | 2048 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
FEAT | SPECIAL FEATURES | ERASABLE |
TTQY | TERMINAL TYPE AND QUANTITY | 40 PRINTED CIRCUIT |