NSN 5962-00-632-5205 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-00-632-5205 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 006325205 |
| NCB Code: USA (00) |
| Manufacturers: Texas Instruments Inc , National Semiconductor Corporation , Freescale Semiconductor Inc , Intel Corp , Intersil Corporation , Fairchild Semiconductor Corp , Military Specifications , Advanced Micro Devices Inc , Compaq Federal Llc , Drs Signal Solutions Inc , Raytheon Company , Lockheed Martin Corporation , General Dynamics Information Systems , Motorola Inc , Genrad Inc , Lockheed Martin Corp , Rockwell Collins Aerospace , Hewlett Packard Company , Nimikkeistokeskus Ncb Finland |
Manufacturer's List for NSN 5962-00-632-5205, 5962006325205
Part Number Related To NSN 5962-00-632-5205, 5962006325205
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| SNJ5489J | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| SN7489J | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| SN5489J | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| SD70334-012B | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| SD70334-012A | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| SC16112LH | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| SC16111LH | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| P3101A | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| MCM4064L | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| IM5501MDE-012B | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| IM5501MDE-012A | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| IM5501CDE | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| HRAM1-0064-2B | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| HRAM1-0064-012B | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| HRAM1-0064-012A | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| HL50808 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| HL50807 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| DM7489N | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| DM7489J | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| DM5489J 883 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| DM5489J | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| DM5489J | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| DH75168 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| DH5980 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| DEC7489 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| C3101 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| AM3101DM-B | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| AM3101 BEA | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| 867489 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| 845588-1 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| 63A133445P18 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| 57952500-01 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| 51-P99967A402 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| 4250-0089 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| 35939644-00 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| 351-7676-012 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| 3101A | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| 31013EB | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| 1820-1028 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| 1820-0628 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
| 10138255 | 5962-00-632-5205 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962006325205
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.760 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.200 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 512.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND POSITIVE OUTPUTS AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 13499-351-7576 DRAWING THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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