NSN 5961-01-383-8149 of Transistor - Product Details
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| Alternative NSN: 5961-01-383-8149 |
| Item Name:Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 013838149 |
| NCB Code: USA (01) |
| Manufacturers: Nec Electronics Usa Inc Electron , California Eastern Lab , Rockwell Collins Aerospace , Tektronix Inc |
Manufacturer's List for NSN 5961-01-383-8149, 5961013838149
Part Number Related To NSN 5961-01-383-8149, 5961013838149
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| NE64535-D | 5961-01-383-8149 | transistor | Avl | RFQ |
| NE64535(C)RKL | 5961-01-383-8149 | transistor | Avl | RFQ |
| 352-1522-012 | 5961-01-383-8149 | transistor | Avl | RFQ |
| 352-1522-010 | 5961-01-383-8149 | transistor | Avl | RFQ |
| 151-0608-00 | 5961-01-383-8149 | transistor | Avl | RFQ |
Characteristics Data of NSN 5961013838149
| MRC | Criteria | Characteristic |
|---|---|---|
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| ABJT | TERMINAL LENGTH | 3.8 MILLIMETERS MINIMUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ABMK | OVERALL WIDTH | 10.15 MILLIMETERS NOMINAL |
| ABKW | OVERALL HEIGHT | 1.8 MILLIMETERS MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| AXGY | MOUNTING METHOD | TERMINAL |
| ABHP | OVERALL LENGTH | 10.15 MILLIMETERS NOMINAL |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 65.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.10 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 1.00 MICROAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS |
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