NSN 5961-01-295-5035 of Transistor - Product Details
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| Alternative NSN: 5961-01-295-5035 |
| Item Name:Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 012955035 |
| NCB Code: USA (01) |
| Manufacturers: Crystalonics Inc , Thales Sa , Rockwell Collins Aerospace |
Manufacturer's List for NSN 5961-01-295-5035, 5961012955035
Part Number Related To NSN 5961-01-295-5035, 5961012955035
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| CM929 | 5961-01-295-5035 | transistor | Avl | RFQ |
| CM860 | 5961-01-295-5035 | transistor | Avl | RFQ |
| 91488417 | 5961-01-295-5035 | transistor | Avl | RFQ |
| 204-0016-010 | 5961-01-295-5035 | transistor | Avl | RFQ |
Characteristics Data of NSN 5961012955035
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND-20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 95105-204-0016-010 MANUFACTURERS SPECIFICATION CONTROL |
