NSN 5961-01-080-1220 of Semiconductor Devic - Product Details
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| Alternative NSN: 5961-01-080-1220 |
| Item Name:Semiconductor Devic |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010801220 |
| NCB Code: USA (01) |
| Manufacturers: Freescale Semiconductor Inc , Trw Electronic Components Division , Varian Associates Inc , Acrian Inc , Microsemi Corporation , Synergetic Technologies Group Inc , Rockwell Collins Aerospace , Stmicroelectronics Inc |
Manufacturer's List for NSN 5961-01-080-1220, 5961010801220
Part Number Related To NSN 5961-01-080-1220, 5961010801220
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| SRF820Q | 5961-01-080-1220 | semiconductor devic | Avl | RFQ |
| SRF820HQ | 5961-01-080-1220 | semiconductor devic | Avl | RFQ |
| J02046R | 5961-01-080-1220 | semiconductor devic | Avl | RFQ |
| CD2867 | 5961-01-080-1220 | semiconductor devic | Avl | RFQ |
| 44004 | 5961-01-080-1220 | semiconductor devic | Avl | RFQ |
| 44004 | 5961-01-080-1220 | semiconductor devic | Avl | RFQ |
| 352-1090-240 | 5961-01-080-1220 | semiconductor devic | Avl | RFQ |
| 352-1090-240 | 5961-01-080-1220 | semiconductor devic | Avl | RFQ |
| 352-1090-080 | 5961-01-080-1220 | semiconductor devic | Avl | RFQ |
| 1468-15 | 5961-01-080-1220 | semiconductor devic | Avl | RFQ |
Characteristics Data of NSN 5961010801220
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | CERAMIC ALL TRANSISTOR |
| ABHP | OVERALL LENGTH | 0.980 INCHES MAXIMUM ALL TRANSISTOR |
| ABKW | OVERALL HEIGHT | 0.300 INCHES MAXIMUM ALL TRANSISTOR |
| ABMK | OVERALL WIDTH | 0.865 INCHES MAXIMUM ALL TRANSISTOR |
| AKPV | MOUNTING FACILITY QUANTITY | 2 ALL TRANSISTOR |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL TRANSISTOR |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | NPN ALL TRANSISTOR |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| ASKA | COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE ALL TRANSISTOR |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE,DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM EMITTER TO B |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES MAXIMUM BASE CURRENT,DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT,DC ALL TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 140.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
| FEAT | SPECIAL FEATURES | CERAMIC CASE CONTAINS BERYLLIUM OXIDE-HANDLE AND DISPOSE IAW HAZMAT PROCEDURES |
| TEST | TEST DATA DOCUMENT | 13499-352-1090 DRAWING THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
| TTQY | TERMINAL TYPE AND QUANTITY | 6 RIBBON ALL TRANSISTOR |
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