NSN 5961-00-110-9356 of Transistor - Product Details
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Alternative NSN: 5961-00-110-9356 |
Item Name:Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 001109356 |
NCB Code: USA (00) |
Manufacturers: Electronic Industries Inc , Siliconix Incorporated , Nai Technologies Inc , Raytheon Technical Services Company , L 3 Communications Corporation , Rockwell Collins Aerospace , Union Carbide Corp , Telcom Semiconductor Inc , National Semiconductor Corporation , General Electric Company , Honeywell Intl Inc , Hewlett Packard Company , Northrop Grumman Corp , Acterna Deutschland Gmbh |
Manufacturer's List for NSN 5961-00-110-9356, 5961001109356
Part Number Related To NSN 5961-00-110-9356, 5961001109356
Part No | NSN | Item Name | QTY | RFQ |
---|---|---|---|---|
RELEASE5345 | 5961-00-110-9356 | transistor | Avl | RFQ |
FN815 | 5961-00-110-9356 | transistor | Avl | RFQ |
804889 | 5961-00-110-9356 | transistor | Avl | RFQ |
657991 | 5961-00-110-9356 | transistor | Avl | RFQ |
657991 | 5961-00-110-9356 | transistor | Avl | RFQ |
352-0898-010 | 5961-00-110-9356 | transistor | Avl | RFQ |
2N4391 | 5961-00-110-9356 | transistor | Avl | RFQ |
2N4391 | 5961-00-110-9356 | transistor | Avl | RFQ |
2N4391 | 5961-00-110-9356 | transistor | Avl | RFQ |
2N4391 | 5961-00-110-9356 | transistor | Avl | RFQ |
19A134093P1 | 5961-00-110-9356 | transistor | Avl | RFQ |
1992402-1 | 5961-00-110-9356 | transistor | Avl | RFQ |
1855-0420 | 5961-00-110-9356 | transistor | Avl | RFQ |
185-2058P1-8608 | 5961-00-110-9356 | transistor | Avl | RFQ |
185-2058P1-426 | 5961-00-110-9356 | transistor | Avl | RFQ |
046759 | 5961-00-110-9356 | transistor | Avl | RFQ |
0001-0068.333 | 5961-00-110-9356 | transistor | Avl | RFQ |
Characteristics Data of NSN 5961001109356
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE,DRAIN-TO-SOURCE,WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE,GATE-TO-SOURCE,WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM GATE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |