SD214DE-3 is a Transistor manufactured by Universal Semiconductor Inc.

What are the specifications of SD214DE-3?

Please contact us for detailed specifications of SD214DE-3.

Is SD214DE-3 available for immediate shipping?

Yes, we ship worldwide with same-day handling on many parts depending on stock availability.

Can Aerospace Orbit supply bulk quantities of SD214DE-3?

Yes, we support both small and large volume orders depending on stock.

Obtain a Quote for Universal Semiconductor Inc Part Number SD214DE-3 Now

Name: Part Number SD214DE-3 - Transistor
Brand: Universal Semiconductor Inc
SKU: sd214de-3
Availability: InStock
Rating: 4.6 (226 reviews)

Part Number: SD214DE-3

Alternate P/N: SD214DE3

Manufacturer: Universal Semiconductor Inc

NSN: 5961-01-142-7897

NIIN: 01-142-7897

Item Name : transistor

CAGE Code: 0AEB1

FSC: 5961 Semiconductor Devices and Associated Hardware

FSG: 59 Electrical and Electronic Equipment Components

INC Code : 20588

Country: USA

NCB Code: 01

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NSN Information for Part Number SD214DE-3 with NSN 5961-01-142-7897, 5961011427897

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5961-01-142-7897 Item PartTypeName: TRANSISTOR	5961	011427897	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
SD214	3	9	5

Characteristics Data of NSN 5961-01-142-7897, 5961011427897

MRC	Criteria	Characteristic
ABBH	INCLOSURE MATERIAL	METAL
ABHP	OVERALL LENGTH	0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
ABJT	TERMINAL LENGTH	0.500 INCHES MINIMUM
ADAV	OVERALL DIAMETER	0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
AGAV	END ITEM IDENTIFICATION	LOS ANGELES CLASS SSN 688 ; SPRUANCE CLASS DD 963 ; EMORY S. LAND CLASS AS; AIRCRAFT,HARRIER AV-8B; GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE; AIRCRAFT,HORNET F/A-18; AIRCRAFT,TOMCAT F-14; INTEGRATED UNDERWATER SURVIELLANCE SYSTE
ALAS	INTERNAL CONFIGURATION	FIELD EFFECT
ALAZ	JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-72
AXGY	MOUNTING METHOD	TERMINAL
AYQS	TERMINAL CIRCLE DIAMETER	0.100 INCHES NOMINAL
CBBL	FEATURES PROVIDED	ELECTROSTATIC SENSITIVE
CTMZ	SEMICONDUCTOR MATERIAL	SILICON
CTQN	VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
CTQX	CURRENT RATING PER CHARACTERISTIC	50.00 MICROAMPERES MAXIMUM DRAIN CURRENT
CTRD	POWER RATING PER CHARACTERISTIC	300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
TEST	TEST DATA DOCUMENT	09344-PC73579 DRAWING THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW
TTQY	TERMINAL TYPE AND QUANTITY	4 INSULATED WIRE LEAD