BAT54ALT1G by Semiconductor Components Industr - Receive a Competitive Quote
Part Number: BAT54ALT1G | Manufacturer: Semiconductor Components Industr | NSN : 5961-01-622-7020 | Item Name : Semiconductor Devices Unitized | CAGE Code: 1MQ07 | FSC : 5961 Semiconductor Devices and Associated Hardware | ||
We’re excited to announce that BAT54ALT1G NSN part is now available and ready for immediate shipping. Part number BAT54ALT1G is a Semiconductor Devices Unitized manufactured by Semiconductor Components Industr with NSN 5961016227020. Are you interested in a quick and competitive quote for this part?
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NSN Information for Part Number BAT54ALT1G with NSN 5961-01-622-7020, 5961016227020
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-622-7020 Item PartTypeName: SEMICONDUCTOR DEVICES,UNITIZED | 5961 | 016227020 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
BAT54ALT1G | 5 | 2 | 5 |
Characteristics Data of NSN 5961-01-622-7020, 5961016227020
MRC | Criteria | Characteristic |
---|---|---|
CTQN | Voltage Rating In Volts Per Characteristic | 30.0 MINIMUM BREAKDOWN VOLTAGE, DC 2ND SEMICONDUCTOR DEVICE DIODE |
ASKA | Component Name And Quantity | 2 SEMICONDUCTOR DEVICE DIODE |
CTQX | Current Rating Per Characteristic | 200.0 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC 1ST SEMICONDUCTOR DEVICE DIODE |
CTRD | Power Rating Per Characteristic | 225.0 MILLIWATTS NOMINAL FORWARD POWER DISSIPATION, DC 1ST SEMICONDUCTOR DEVICE DIODE |
AKPV | Mounting Facility Quantity | 3 |
AXGY | Mounting Method | TERMINAL |
CTRD | Power Rating Per Characteristic | 225.0 MILLIWATTS NOMINAL FORWARD POWER DISSIPATION, DC 2ND SEMICONDUCTOR DEVICE DIODE |
CTRG | Capacitance Rating In Picofarads | 7.6 NOMINAL AND 10.0 MAXIMUM 1ST SEMICONDUCTOR DEVICE DIODE |
ABKW | Overall Height | 0.040 INCHES NOMINAL |
CTSG | Maximum Operating Temp Per Measurement Point | 150.0 DEG CELSIUS JUNCTION |
CTQX | Current Rating Per Characteristic | 200.0 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC 2ND SEMICONDUCTOR DEVICE DIODE |
CTRG | Capacitance Rating In Picofarads | 7.6 NOMINAL AND 10.0 MAXIMUM 2ND SEMICONDUCTOR DEVICE DIODE |
CBBL | Features Provided | VERY HIGH SPEED |
AFZC | Function For Which Designed | DETECTOR AND SWITCHING |
ALAZ | Joint Electronic Device Engineering Council/Jedec/Case Outline Designation | 318 |
ABHP | Overall Length | 0.114 INCHES NOMINAL |
TTQY | Terminal Type And Quantity | 3 PRINTED CIRCUIT |
ABJT | Terminal Length | 0.021 INCHES NOMINAL |
ABMK | Overall Width | 0.094 INCHES NOMINAL |
CXCY | Part Name Assigned By Controlling Agency | DIODE |
ABBH | Inclosure Material | PLASTIC |
MRC | Decoded Requirement | Clear Text Reply |
CTQN | Voltage Rating In Volts Per Characteristic | 30.0 MINIMUM BREAKDOWN VOLTAGE, DC 1ST SEMICONDUCTOR DEVICE DIODE |
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