PDM41024S45CEOB by Paradigm Technology Inc - Receive a Competitive Quote

Part Number:  PDM41024S45CEOB
Manufacturer:  Paradigm Technology Inc
NIIN:  01-371-9050
Item Name :  microcircuit memory
CAGE Code:  0K6N4
INC Code :  41015
Country:  USA
NCB Code:  01

You have reached the Request for Quote (RFQ) page for part number PDM41024S45CEOB, an item sourced from Paradigm Technology Inc (CAGE Code 0K6N4) that is classified with the item name Microcircuit Memory. Here, you can utilize our online form to quickly secure tailored pricing and procurement options from our staff as the first step of procurement. With responses always being quick, be sure to get started as soon as possible if you would like to learn more about this part number.

Important Details for Part Number PDM41024S45CEOB

The part number PDM41024S45CEOB is associated with Paradigm Technology Inc, identified by the CAGE Code 0K6N4, and is typically referenced under the item name Microcircuit Memory. It is categorized under the NSN 5962-01-371-9050, with the NIIN 013719050, INC 41015, and NCB code 01 (USA). Additionally, this part falls under the Federal Supply Group (FSG) 59 and Federal Supply Class (FSC) 5962 Microcircuits Electronic. For more information, these classifications provide further context about the component.

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Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/customer-terms-and-conditions/ . All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.

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NSN Information for Part Number PDM41024S45CEOB with NSN 5962-01-371-9050, 5962013719050

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-371-9050

Item PartTypeName:

MICROCIRCUIT,MEMORY

59620137190500NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
EDI88128CX45CB515

Characteristics Data of NSN 5962-01-371-9050, 5962013719050

MRCCriteriaCharacteristic
TESTTEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI
ZZZTNONDEFINITIVE SPEC/STD DATA27 TYPE AND M CLASS AND X CASE AND A FINISH
ADATBODY WIDTH0.580 INCHES MINIMUM AND 0.605 INCHES MAXIMUM
AEHXMAXIMUM POWER DISSIPATION RATING1.0 WATTS
AFGAOPERATING TEMP RANGE55.0 TO 125.0 DEG CELSIUS
CBBLFEATURES PROVIDEDLOW POWER AND MONOLITHIC AND TESTED TO MIL-STD-883
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY
TTQYTERMINAL TYPE AND QUANTITY32 PRINTED CIRCUIT
ADAQBODY LENGTH1.580 INCHES MINIMUM AND 1.700 INCHES MAXIMUM
ADAUBODY HEIGHT0.129 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
AFJQSTORAGE TEMP RANGE65.0 TO 150.0 DEG CELSIUS
AGAVEND ITEM IDENTIFICATIONAN/FPS-108A E/I FSCM 99687
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CWSGTERMINAL SURFACE TREATMENTSOLDER
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUIT,MEMORY,DIGITAL,CMOS 128K X 8 STATIC RANDOM ACESS MEMORY SCRAM LOW POWER
CZEQTIME RATING PER CHACTERISTIC45.00 NANOSECONDS NOMINAL ACCESS
CZERMEMORY DEVICE TYPERAM
CZESHYBRID TECHNOLOGY TYPEMONOLITHIC
ZZZKSPECIFICATION/STANDARD DATA67268-5962-89596 GOVERNMENT STANDARD

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