DR511-1832-013H by Leonardo Mw Ltd - Receive a Competitive Quote

Part Number:  DR511-1832-013H
Alternate P/N:  DR5111832013H
Manufacturer:  Leonardo Mw Ltd
NIIN:  01-371-6294
Item Name :  microcircuit memory
CAGE Code:  K1066
INC Code :  41015
Country:  USA
NCB Code:  01

You have reached the Request for Quote (RFQ) page for part number DR511-1832-013H, an item sourced from Leonardo Mw Ltd (CAGE Code K1066) that is classified with the item name Microcircuit Memory. Here, you can utilize our online form to quickly secure tailored pricing and procurement options from our staff as the first step of procurement. With responses always being quick, be sure to get started as soon as possible if you would like to learn more about this part number.

Important Details for Part Number DR511-1832-013H

The part number DR511-1832-013H is associated with Leonardo Mw Ltd, identified by the CAGE Code K1066, and is typically referenced under the item name Microcircuit Memory. It is categorized under the NSN 5962-01-371-6294, with the NIIN 013716294, INC 41015, and NCB code 01 (USA). Additionally, this part falls under the Federal Supply Group (FSG) 59 and Federal Supply Class (FSC) 5962 Microcircuits Electronic. For more information, these classifications provide further context about the component.

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Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/customer-terms-and-conditions/ . All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.

How to Request a Quote on Part Number DR511-1832-013H

With the form provided, be sure to present our staff with key details on your needs, such as your target pricing, required quantity, and expected turnaround time. Once we receive and review your request for part DR511-1832-013H, a member of our staff will contact you in 15 minutes or less to present customized solutions for your comparisons. Once you make a purchase with us, you can expect our staff to work closely with you through each step of fulfillment to ensure that all needs are met with care and efficiency.


NSN Information for Part Number DR511-1832-013H with NSN 5962-01-371-6294, 5962013716294

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-371-6294

Item PartTypeName:

MICROCIRCUIT,MEMORY

59620137162940NB
CIICHCCESDPMICCriticalityENAC
UBU
Part NumberISCRNVCRNCCHCCMSDSSADC
7138086-1527

Characteristics Data of NSN 5962-01-371-6294, 5962013716294

MRCCriteriaCharacteristic
AEHXMAXIMUM POWER DISSIPATION RATING1.0 WATTS
AFGAOPERATING TEMP RANGE55.0 TO 125.0 DEG CELSIUS
AGAVEND ITEM IDENTIFICATIONPACER DAWN
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUIT,DIGITAL,MONOLITHIC 256K 32K X 8-BIT CMOS,STATIC RANDOM ACCESS MEMORY SRAM
CZERMEMORY DEVICE TYPERAM
AFJQSTORAGE TEMP RANGE65.0 TO 125.0 DEG CELSIUS
CTFTCASE OUTLINE SOURCE AND DESIGNATORD-10 MIL-M-38510
TTQYTERMINAL TYPE AND QUANTITY28 PIN
CZEQTIME RATING PER CHACTERISTIC45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CRTLCRITICALITY CODE JUSTIFICATIONFEAT
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
FEATSPECIAL FEATURESESD

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