MEM660-012 by General Semiconductor Industries Inc - Receive a Competitive Quote
Part Number: MEM660-012 | Alternate P/N: MEM660012 | Manufacturer: General Semiconductor Industries Inc | NSN : 5961-01-063-2495 | Item Name : Transistor | CAGE Code: 14936 | FSC : 5961 Semiconductor Devices and Associated Hardware | ||
We’re excited to announce that MEM660-012 NSN part is now available and ready for immediate shipping. Part number MEM660-012 is a Transistor manufactured by General Semiconductor Industries Inc with NSN 5961010632495. Are you interested in a quick and competitive quote for this part?
Just NSN Parts, owned and operated by ASAP Semiconductor, is a leading distributor of NSN (National Stock Number) parts, new and obsolete. Because of our dedication to quality, we’re the only independent distributor in the United States with a strict No China Sourcing Pledge. We’re also an AS9120B, ISO 9001:2015 certified, and FAA AC 0056B accredited member of the Aviation Suppliers Association (ASA). Our vast and comprehensive inventory of over 2 billion parts coupled with our shipping facilities in Washington, Oregon, California, New Maxico, Nevada, Arizona, Illinois, Minnesota, Pennsylvania, and New York, allow us to offer you some of the fastest delivery times in the industry.
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NSN Information for Part Number MEM660-012 with NSN 5961-01-063-2495, 5961010632495
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-063-2495 Item PartTypeName: TRANSISTOR | 5961 | 010632495 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | U | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
MEM660-012 | 2 | 9 | 5 |
Characteristics Data of NSN 5961-01-063-2495, 5961010632495
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
AXGY | MOUNTING METHOD | TERMINAL |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE |
CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
TEST | TEST DATA DOCUMENT | 94117-209068 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTING GE |
TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |