NSN 5962-01-486-6191 of Microcircuit Memory - Product Details
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Alternative NSN: 5962-01-486-6191 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 014866191 |
NCB Code: USA (01) |
Manufacturers: Dla Land And Maritime , Micron Industries Corp , Texas Instruments Inc , Austin Semiconductor Inc |
Manufacturer's List for NSN 5962-01-486-6191, 5962014866191
Part Number Related To NSN 5962-01-486-6191, 5962014866191
Part No | NSN | Item Name | QTY | RFQ |
---|---|---|---|---|
5962-90617 | 5962-01-486-6191 | microcircuit memory | Avl | RFQ |
5962-9061703MRA | 5962-01-486-6191 | microcircuit memory | Avl | RFQ |
5962-9061703MRX | 5962-01-486-6191 | microcircuit memory | Avl | RFQ |
MT4C4256C-10-883C | 5962-01-486-6191 | microcircuit memory | Avl | RFQ |
SMJ44C256-10JDM | 5962-01-486-6191 | microcircuit memory | Avl | RFQ |
SNJ44C256-10JDM | 5962-01-486-6191 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962014866191
MRC | Criteria | Characteristic |
---|---|---|
AEHX | Maximum Power Dissipation Rating | 1.0 WATTS |
MRC | Decoded Requirement | Clear Text Reply |
CQSJ | Inclosure Material | CERAMIC |
TEST | Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
CBBL | Features Provided | MONOLITHIC |
CXCY | Part Name Assigned By Controlling Agency | MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K-4 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON |
CQSZ | Inclosure Configuration | DUAL-IN-LINE |
AFGA | Operating Temp Range | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | Storage Temp Range | -65.0 TO 150.0 DEG CELSIUS |
AGAV | End Item Identification | SEAWOLF CLASS SSN |
CZEQ | Time Rating Per Chacteristic | 100.00 NANOSECONDS NOMINAL ACCESS |
FEAT | Special Features | PER SMD COMMENTS, T.I. LOGO TO BE SUPPLIED UNTIL STOCK IS EXHAUSTED |
TTQY | Terminal Type And Quantity | 20 PRINTED CIRCUIT |
CZEN | Voltage Rating And Type Per Characteristic | -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZER | Memory Device Type | RAM |
CQWX | Output Logic Form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |