NSN 5962-01-483-1896 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-483-1896 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 014831896 |
| NCB Code: USA (01) |
| Manufacturers: Raytheon Company |
Manufacturer's List for NSN 5962-01-483-1896, 5962014831896
Part Number Related To NSN 5962-01-483-1896, 5962014831896
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| G553506-217 | 5962-01-483-1896 | microcircuit memory | Avl | RFQ |
| G553506 | 5962-01-483-1896 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962014831896
| MRC | Criteria | Characteristic |
|---|---|---|
| CXCY | Part Name Assigned By Controlling Agency | MICROCIRCUIT, DIGITAL, UVE PROM |
| AEHX | Maximum Power Dissipation Rating | 1.0 WATTS |
| CZER | Memory Device Type | EPROM |
| TEST | Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CBBL | Features Provided | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND ULTRAVIOLET ERASABLE |
| CQSJ | Inclosure Material | CERAMIC AND GLASS |
| FEAT | Special Features | ALTERED ITEM MADE FROM 5962-8953701YA/BURN FILE P/N BFG553506-217 |
| CQSZ | Inclosure Configuration | DUAL-IN-LINE |
| AFGA | Operating Temp Range | -55.0 TO 125.0 DEG CELSIUS |
| TTQY | Terminal Type And Quantity | 28 PRINTED CIRCUIT |
| AFJQ | Storage Temp Range | -65.0 TO 150.0 DEG CELSIUS |
| CZEN | Voltage Rating And Type Per Characteristic | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
| CWSG | Terminal Surface Treatment | SOLDER |
| AGAV | End Item Identification | CP-2237/SPS-4, OLIVER PERRY CLASS FFG |
| CZEQ | Time Rating Per Chacteristic | 65.00 NANOSECONDS NOMINAL ACCESS |
| CQWX | Output Logic Form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MRC | Decoded Requirement | Clear Text Reply |
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