NSN 5962-01-448-4043 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-448-4043 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 014484043 |
| NCB Code: USA (01) |
| Manufacturers: Sci Technology Inc |
Manufacturer's List for NSN 5962-01-448-4043, 5962014484043
Part Number Related To NSN 5962-01-448-4043, 5962014484043
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 5363253-001 | 5962-01-448-4043 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962014484043
| MRC | Criteria | Characteristic |
|---|---|---|
| CRTL | Criticality Code Justification | CBBL |
| AGAV | End Item Identification | F-15 I |
| CTQX | Current Rating Per Characteristic | 25.00 MILLIAMPERES MAXIMUM SUPPLY |
| CZER | Memory Device Type | EPROM |
| TEST | Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| AFJQ | Storage Temp Range | -65.0 TO 150.0 DEG CELSIUS |
| MRC | Decoded Requirement | Clear Text Reply |
| CTFT | Case Outline Source And Designator | D-10 MIL-M-38510 |
| CQZP | Input Circuit Pattern | 23 INPUT |
| CWSG | Terminal Surface Treatment | SOLDER |
| ADAT | Body Width | 0.500 INCHES MAXIMUM |
| FEAT | Special Features | ALTERED ITEM MAKE FROM 5962-8606302XA,CONFIGURATION CP5363700, REV A, CHECKSUM 6391 |
| CBBL | Features Provided | MONOLITHIC AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND ELECTROSTATIC SENSITIVE |
| CQSZ | Inclosure Configuration | DUAL-IN-LINE |
| ADAQ | Body Length | 1.375 INCHES MAXIMUM |
| TTQY | Terminal Type And Quantity | 28 PRINTED CIRCUIT |
| AEHX | Maximum Power Dissipation Rating | 275.0 MILLIWATTS |
| ADAU | Body Height | 0.185 INCHES MAXIMUM |
| CZEN | Voltage Rating And Type Per Characteristic | 14.0 VOLTS MAXIMUM POWER SOURCE |
| CQSJ | Inclosure Material | CERAMIC |
| AFGA | Operating Temp Range | -55.0 TO 125.0 DEG CELSIUS |
| CQWX | Output Logic Form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
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