NSN 5962-01-408-2869 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-408-2869 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 014082869 |
| NCB Code: USA (01) |
| Manufacturers: Nec Electronics Usa Inc Electron , Samsung Semiconductor Inc , Hitachi America Ltd |
Manufacturer's List for NSN 5962-01-408-2869, 5962014082869
Part Number Related To NSN 5962-01-408-2869, 5962014082869
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| UPD431000ACZ-70L | 5962-01-408-2869 | microcircuit memory | Avl | RFQ |
| PD431000ACZ-70L | 5962-01-408-2869 | microcircuit memory | Avl | RFQ |
| K6T1008C2EDB7000 | 5962-01-408-2869 | microcircuit memory | Avl | RFQ |
| HM628128LP-7 | 5962-01-408-2869 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962014082869
| MRC | Criteria | Characteristic |
|---|---|---|
| AGAV | III END ITEM IDENTIFICATION | REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10) |
| SR-5 | THE MANUFACTURERS DATA | |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| AFGA | OPERATING TEMP RANGE | 0.0 TO 70.0 DEG CELSIUS |
| FEAT | SPECIAL FEATURES | 128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS |
| CSWJ | (NON-CORE DATA) WORD QUANTITY | 131072 |
| AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| SR-5 | DESIGN CONTROL REFERENCE | HM628128LP-7 |
| CQSJ | INCLOSURE MATERIAL | PLASTIC |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM |
| SR-5 | MANUFACTURERS CODE | 62786 |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| CZER | MEMORY DEVICE TYPE | RAM |
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