NSN 5962-01-406-5918 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-406-5918 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 014065918 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Raytheon Company , Matra Harris Semiconductor , Integrated Device Technology Inc , Logic Devices Incorporated , Austin Semiconductor Inc , Performance Semiconductor Corp |
Manufacturer's List for NSN 5962-01-406-5918, 5962014065918
| dla land and maritime | raytheon company | matra harris semiconductor |
| integrated device technology inc | logic devices incorporated | austin semiconductor inc |
| performance semiconductor corp |
Part Number Related To NSN 5962-01-406-5918, 5962014065918
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 5962-38294 | 5962-01-406-5918 | microcircuit memory | Avl | RFQ |
| 5962-3829409MZA | 5962-01-406-5918 | microcircuit memory | Avl | RFQ |
| 5962-3829409MZB | 5962-01-406-5918 | microcircuit memory | Avl | RFQ |
| 5962-3829409MZX | 5962-01-406-5918 | microcircuit memory | Avl | RFQ |
| 5962-8552505ZA | 5962-01-406-5918 | microcircuit memory | Avl | RFQ |
| 5962-8552505ZX | 5962-01-406-5918 | microcircuit memory | Avl | RFQ |
| G492096-430 | 5962-01-406-5918 | microcircuit memory | Avl | RFQ |
| HM1 65764N 883 | 5962-01-406-5918 | microcircuit memory | Avl | RFQ |
| IDT7164S55TDB | 5962-01-406-5918 | microcircuit memory | Avl | RFQ |
| L7C185DMB CMB55 | 5962-01-406-5918 | microcircuit memory | Avl | RFQ |
| MT5C6408C-55 | 5962-01-406-5918 | microcircuit memory | Avl | RFQ |
| P4C164-55DMB | 5962-01-406-5918 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962014065918
| MRC | Criteria | Characteristic |
|---|---|---|
| SR-1 | MANUFACTURERS CODE | 67268 |
| ADAQ | BODY LENGTH | 1.485 INCHES MAXIMUM |
| CRHL | (NON-CORE DATA) BIT QUANTITY | 65536 |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 8 STATIC RAM. |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY |
| ADAU | BODY HEIGHT | 0.215 INCHES MAXIMUM |
| SR-1 | SPEC/STD CONTROLLING DATA | |
| CSWJ | (NON-CORE DATA) WORD QUANTITY | 8192 |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-15 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 125.00 MILLIAMPERES MAXIMUM OUTPUT |
| SR-1 | NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | 5962-38294 |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| SR-1 | DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | 5962-3829409MZA |
| CZER | MEMORY DEVICE TYPE | RAM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
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