NSN 5962-01-362-3539 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-362-3539 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013623539 |
| NCB Code: USA (01) |
| Manufacturers: Omni Wave Semiconductor Corp , Dla Land And Maritime , Integrated Device Technology Inc , Military Specifications , Austin Semiconductor Inc |
Manufacturer's List for NSN 5962-01-362-3539, 5962013623539
| omni wave semiconductor corp | dla land and maritime | integrated device technology inc |
| military specifications | austin semiconductor inc |
Part Number Related To NSN 5962-01-362-3539, 5962013623539
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 0W62256CD3-45 | 5962-01-362-3539 | microcircuit memory | Avl | RFQ |
| 5962-88662 | 5962-01-362-3539 | microcircuit memory | Avl | RFQ |
| 5962-8866204XA | 5962-01-362-3539 | microcircuit memory | Avl | RFQ |
| 5962-8866204XB | 5962-01-362-3539 | microcircuit memory | Avl | RFQ |
| 5962-8866204XX | 5962-01-362-3539 | microcircuit memory | Avl | RFQ |
| IDT71256S35DB | 5962-01-362-3539 | microcircuit memory | Avl | RFQ |
| IDT71256S45D | 5962-01-362-3539 | microcircuit memory | Avl | RFQ |
| IDT71256S45DB | 5962-01-362-3539 | microcircuit memory | Avl | RFQ |
| M38510/29308BXA | 5962-01-362-3539 | microcircuit memory | Avl | RFQ |
| MT5C2568CW-45883C | 5962-01-362-3539 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013623539
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 150.00 MILLIAMPERES MAXIMUM SUPPLY |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| ADAU | BODY HEIGHT | 0.217 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND STATIC OPERATION |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 26 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEP | CAPITANCE RATING PER CHARACTERISTIC | 11.00 INPUT PICOFARADS MAXIMUM AND 11.00 OUTPUT PICOFARADS MAXIMUM |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM ACCESS |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CZER | MEMORY DEVICE TYPE | RAM |
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