NSN 5962-01-357-6617 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-357-6617 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013576617 |
| NCB Code: USA (01) |
| Manufacturers: L 3 Communications Corporation , Military Specifications , Dla Land And Maritime |
Manufacturer's List for NSN 5962-01-357-6617, 5962013576617
Part Number Related To NSN 5962-01-357-6617, 5962013576617
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 411907-009 | 5962-01-357-6617 | microcircuit memory | Avl | RFQ |
| 5962-3850401BRA | 5962-01-357-6617 | microcircuit memory | Avl | RFQ |
| M38510/50401BRA | 5962-01-357-6617 | microcircuit memory | Avl | RFQ |
| ROM/PROM FAMILY 049 | 5962-01-357-6617 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013576617
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAU | BODY HEIGHT | 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 2.0 WATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BIDIRECTIONAL AND BIPOLAR AND PROGRAMMABLE AND HIGH IMPEDANCE AND W/CLOCK AND W/DISABLE AND MONOLITHIC |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 180.00 MILLIAMPERES REVERSE CURRENT,DC ABSOLUTE |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE |
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| CZEQ | TIME RATING PER CHACTERISTIC | 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PAL |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | AND/OR INVERT GATE ARRAY |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
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