NSN 5962-01-339-5648 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-339-5648 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013395648 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Military Specifications , Northrop Grumman Systems Corporation |
Manufacturer's List for NSN 5962-01-339-5648, 5962013395648
Part Number Related To NSN 5962-01-339-5648, 5962013395648
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| ROM/PROM FAMILY 013 | 5962-01-339-5648 | microcircuit memory | Avl | RFQ |
| M38510/20702BEA | 5962-01-339-5648 | microcircuit memory | Avl | RFQ |
| 5962-3820702BEA | 5962-01-339-5648 | microcircuit memory | Avl | RFQ |
| 1A24206H01 | 5962-01-339-5648 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013395648
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.840 INCHES MAXIMUM |
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND BIPOLAR AND PROGRAMMED |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZER | MEMORY DEVICE TYPE | PROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | RADAR SET AN/SPS-40D |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 130.00 MILLIAMPERES MAXIMUM SUPPLY |
| CZEQ | TIME RATING PER CHACTERISTIC | 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| ABKW | OVERALL HEIGHT | 0.400 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
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