NSN 5962-01-338-1299 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-338-1299 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013381299 |
| NCB Code: USA (01) |
| Manufacturers: Nimikkeistokeskus Ncb Finland , Dla Land And Maritime , Marathonnorco Aerospace Inc , Integrated Device Technology Inc |
Manufacturer's List for NSN 5962-01-338-1299, 5962013381299
| nimikkeistokeskus ncb finland | dla land and maritime | marathonnorco aerospace inc |
| integrated device technology inc |
Part Number Related To NSN 5962-01-338-1299, 5962013381299
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 10133858 | 5962-01-338-1299 | microcircuit memory | Avl | RFQ |
| 5962-8403613M3A | 5962-01-338-1299 | microcircuit memory | Avl | RFQ |
| 5962-8403613M3B | 5962-01-338-1299 | microcircuit memory | Avl | RFQ |
| 5962-8403613M3X | 5962-01-338-1299 | microcircuit memory | Avl | RFQ |
| 84036 | 5962-01-338-1299 | microcircuit memory | Avl | RFQ |
| 84036133A | 5962-01-338-1299 | microcircuit memory | Avl | RFQ |
| 84036133B | 5962-01-338-1299 | microcircuit memory | Avl | RFQ |
| 84036133X | 5962-01-338-1299 | microcircuit memory | Avl | RFQ |
| 8507005-231 | 5962-01-338-1299 | microcircuit memory | Avl | RFQ |
| IDT6116SA70L28B | 5962-01-338-1299 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013381299
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAT | BODY WIDTH | 0.442 INCHES MINIMUM AND 0.460 INCHES MAXIMUM |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | C-4 MIL-M-38510 |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CZEQ | TIME RATING PER CHACTERISTIC | 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| ADAQ | BODY LENGTH | 0.442 INCHES MINIMUM AND 0.460 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.060 INCHES MINIMUM AND 0.100 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND POSITIVE OUTPUTS AND MONOLITHIC |
| CZER | MEMORY DEVICE TYPE | RAM |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 LEADLESS |
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