NSN 5962-01-321-9019 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-321-9019 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013219019 |
| NCB Code: USA (01) |
| Manufacturers: Northrop Grumman Systems Corporation , Northrop Grumman Systems Corporation Dba Defense Systems Sector , Dla Land And Maritime |
Manufacturer's List for NSN 5962-01-321-9019, 5962013219019
| northrop grumman systems corporation | northrop grumman systems corporation dba defense systems sector | dla land and maritime |
Part Number Related To NSN 5962-01-321-9019, 5962013219019
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 128EDCA00722-1 | 5962-01-321-9019 | microcircuit memory | Avl | RFQ |
| 128EDCC00750-1 | 5962-01-321-9019 | microcircuit memory | Avl | RFQ |
| 128EDCC00750-1 | 5962-01-321-9019 | microcircuit memory | Avl | RFQ |
| 8202503YA | 5962-01-321-9019 | microcircuit memory | Avl | RFQ |
| ROM/PROM | 5962-01-321-9019 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013219019
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 1.490 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEQ | TIME RATING PER CHACTERISTIC | 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| ADAU | BODY HEIGHT | 0.217 INCHES MAXIMUM |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| ABKW | OVERALL HEIGHT | 0.432 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 0.620 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.610 INCHES MAXIMUM |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED AND ULTRAVIOLET ERASABLE |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
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