NSN 5962-01-314-0728 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-314-0728 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013140728 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Hamilton Sundstrand Corporation , United Technologies Corporation |
Manufacturer's List for NSN 5962-01-314-0728, 5962013140728
Part Number Related To NSN 5962-01-314-0728, 5962013140728
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| ROM PROM FAMILY 149 | 5962-01-314-0728 | microcircuit memory | Avl | RFQ |
| 90301-9 | 5962-01-314-0728 | microcircuit memory | Avl | RFQ |
| 90301 9 | 5962-01-314-0728 | microcircuit memory | Avl | RFQ |
| 8510201YA | 5962-01-314-0728 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013140728
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAU | BODY HEIGHT | 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE |
| ABKW | OVERALL HEIGHT | 0.357 INCHES MINIMUM AND 0.432 INCHES MAXIMUM |
| ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 170.0 MILLIWATTS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEQ | TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| AFGA | OPERATING TEMP RANGE | 55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 14.0 VOLTS MAXIMUM POWER SOURCE |
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