NSN 5962-01-307-2587 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-307-2587 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013072587 |
| NCB Code: USA (01) |
| Manufacturers: Bae Systems Land And Armaments Lp , Dla Land And Maritime , Palomar Products Inc , Altera Corporation , Lockheed Martin Librascope , Intel Corp |
Manufacturer's List for NSN 5962-01-307-2587, 5962013072587
| bae systems land and armaments lp | dla land and maritime | palomar products inc |
| altera corporation | lockheed martin librascope | intel corp |
Part Number Related To NSN 5962-01-307-2587, 5962013072587
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 486-2244-0035 | 5962-01-307-2587 | microcircuit memory | Avl | RFQ |
| 486-2244-0036 | 5962-01-307-2587 | microcircuit memory | Avl | RFQ |
| 486-2244-0040 | 5962-01-307-2587 | microcircuit memory | Avl | RFQ |
| 5962-86864 | 5962-01-307-2587 | microcircuit memory | Avl | RFQ |
| 5962-8686401LA | 5962-01-307-2587 | microcircuit memory | Avl | RFQ |
| 5962-8686401LB | 5962-01-307-2587 | microcircuit memory | Avl | RFQ |
| 5962-8686401LX | 5962-01-307-2587 | microcircuit memory | Avl | RFQ |
| 5962-86886401LX | 5962-01-307-2587 | microcircuit memory | Avl | RFQ |
| EP600DM883B | 5962-01-307-2587 | microcircuit memory | Avl | RFQ |
| EP600IDM883B-55 | 5962-01-307-2587 | microcircuit memory | Avl | RFQ |
| L537111373 | 5962-01-307-2587 | microcircuit memory | Avl | RFQ |
| MD5C060 55 B | 5962-01-307-2587 | microcircuit memory | Avl | RFQ |
| ROM PROM HEAD 176 | 5962-01-307-2587 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013072587
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.280 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | PAL |
| ABKW | OVERALL HEIGHT | 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND W/CLOCK |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 650.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
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