NSN 5962-01-283-0730 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-283-0730 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012830730 |
| NCB Code: USA (01) |
| Manufacturers: Fujitsu Microelectronics Ltd , Advanced Micro Devices Inc , Dla Land And Maritime , Northrop Grumman Systems Corporation , Lockheed Martin Corp , Bae Systems Inc |
Manufacturer's List for NSN 5962-01-283-0730, 5962012830730
| fujitsu microelectronics ltd | advanced micro devices inc | dla land and maritime |
| northrop grumman systems corporation | lockheed martin corp | bae systems inc |
Part Number Related To NSN 5962-01-283-0730, 5962012830730
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| MB81C67-45Z-W-SC | 5962-01-283-0730 | microcircuit memory | Avl | RFQ |
| AM2167-55 BRA | 5962-01-283-0730 | microcircuit memory | Avl | RFQ |
| 8200703RX | 5962-01-283-0730 | microcircuit memory | Avl | RFQ |
| 8200703RB | 5962-01-283-0730 | microcircuit memory | Avl | RFQ |
| 8200703RA | 5962-01-283-0730 | microcircuit memory | Avl | RFQ |
| 82007 | 5962-01-283-0730 | microcircuit memory | Avl | RFQ |
| 645A747H01 | 5962-01-283-0730 | microcircuit memory | Avl | RFQ |
| 5962-8200703BRX | 5962-01-283-0730 | microcircuit memory | Avl | RFQ |
| 5962-8200703BRB | 5962-01-283-0730 | microcircuit memory | Avl | RFQ |
| 5962-8200703BRA | 5962-01-283-0730 | microcircuit memory | Avl | RFQ |
| 2698-0375 | 5962-01-283-0730 | microcircuit memory | Avl | RFQ |
| 201882-002 | 5962-01-283-0730 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012830730
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.2 WATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND STATIC OPERATION |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 17 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
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