NSN 5962-01-262-1280 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-262-1280 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012621280 |
| NCB Code: USA (01) |
| Manufacturers: Intel Corp , Integrated Device Technology Inc , Raytheon Company , Advanced Micro Devices Inc , L 3 Communications Corporation , Freescale Semiconductor Inc , Dla Land And Maritime |
Manufacturer's List for NSN 5962-01-262-1280, 5962012621280
| intel corp | integrated device technology inc | raytheon company |
| advanced micro devices inc | l 3 communications corporation | freescale semiconductor inc |
| dla land and maritime |
Part Number Related To NSN 5962-01-262-1280, 5962012621280
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| MD51C68 70 B | 5962-01-262-1280 | microcircuit memory | Avl | RFQ |
| IDT6168SA55DB | 5962-01-262-1280 | microcircuit memory | Avl | RFQ |
| G283585-1 | 5962-01-262-1280 | microcircuit memory | Avl | RFQ |
| AM99C68 55 BRA | 5962-01-262-1280 | microcircuit memory | Avl | RFQ |
| 900332-003 | 5962-01-262-1280 | microcircuit memory | Avl | RFQ |
| 6268 55 BRAJC | 5962-01-262-1280 | microcircuit memory | Avl | RFQ |
| 5962-8670507RX | 5962-01-262-1280 | microcircuit memory | Avl | RFQ |
| 5962-8670507RA | 5962-01-262-1280 | microcircuit memory | Avl | RFQ |
| 5962-86705 | 5962-01-262-1280 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012621280
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND STATIC OPERATION |
| CQSJ | INCLOSURE MATERIAL | METAL OR CERAMIC OR PLASTIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 18 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER OR TIN OR GOLD |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| PMLC | PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACE OPTION GOLD |
| PRMT | PRECIOUS MATERIAL | GOLD |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
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