NSN 5962-01-260-8681 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-260-8681 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012608681 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Freescale Semiconductor Inc , Matra Harris Semiconductor , Integrated Device Technology Inc , Austin Semiconductor Inc |
Manufacturer's List for NSN 5962-01-260-8681, 5962012608681
| dla land and maritime | freescale semiconductor inc | matra harris semiconductor |
| integrated device technology inc | austin semiconductor inc |
Part Number Related To NSN 5962-01-260-8681, 5962012608681
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 5962-38294 | 5962-01-260-8681 | microcircuit memory | Avl | RFQ |
| 5962-3829409MYA | 5962-01-260-8681 | microcircuit memory | Avl | RFQ |
| 5962-3829409MYB | 5962-01-260-8681 | microcircuit memory | Avl | RFQ |
| 5962-3829409MYX | 5962-01-260-8681 | microcircuit memory | Avl | RFQ |
| 5962-85525 | 5962-01-260-8681 | microcircuit memory | Avl | RFQ |
| 5962-8552505YB | 5962-01-260-8681 | microcircuit memory | Avl | RFQ |
| 5962-8552505YX | 5962-01-260-8681 | microcircuit memory | Avl | RFQ |
| 6164-55 BXAJC | 5962-01-260-8681 | microcircuit memory | Avl | RFQ |
| HM4 65764N 883 | 5962-01-260-8681 | microcircuit memory | Avl | RFQ |
| IDT7164S55L32B | 5962-01-260-8681 | microcircuit memory | Avl | RFQ |
| MT5C6408ECW-55 | 5962-01-260-8681 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012608681
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.560 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.458 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.120 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND STATIC OPERATION |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 21 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | C-12 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 125.00 MILLIAMPERES MAXIMUM SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 GULLWING |
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