NSN 5962-01-260-8680 of Microcircuit Memory - Product Details
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Alternative NSN: 5962-01-260-8680 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012608680 |
NCB Code: USA (01) |
Manufacturers: Performance Semiconductor Corp , Integrated Device Technology Inc , Matra Harris Semiconductor , Thales Sa , Dla Land And Maritime , Raytheon Company , Nimikkeistokeskus Ncb Finland |
Manufacturer's List for NSN 5962-01-260-8680, 5962012608680
performance semiconductor corp | integrated device technology inc | matra harris semiconductor |
thales sa | dla land and maritime | raytheon company |
nimikkeistokeskus ncb finland |
Part Number Related To NSN 5962-01-260-8680, 5962012608680
Part No | NSN | Item Name | QTY | RFQ |
---|---|---|---|---|
P4C164-55DWMB | 5962-01-260-8680 | microcircuit memory | Avl | RFQ |
IDT7164S55DB | 5962-01-260-8680 | microcircuit memory | Avl | RFQ |
IDT7164L55DB | 5962-01-260-8680 | microcircuit memory | Avl | RFQ |
HM1E 65764N 883 | 5962-01-260-8680 | microcircuit memory | Avl | RFQ |
99165736 | 5962-01-260-8680 | microcircuit memory | Avl | RFQ |
8552505XA | 5962-01-260-8680 | microcircuit memory | Avl | RFQ |
72-01398-097 | 5962-01-260-8680 | microcircuit memory | Avl | RFQ |
5962-8552505XX | 5962-01-260-8680 | microcircuit memory | Avl | RFQ |
5962-8552505XB | 5962-01-260-8680 | microcircuit memory | Avl | RFQ |
5962-8552505XA | 5962-01-260-8680 | microcircuit memory | Avl | RFQ |
5962-85525 | 5962-01-260-8680 | microcircuit memory | Avl | RFQ |
5962-3829409MXX | 5962-01-260-8680 | microcircuit memory | Avl | RFQ |
5962-3829409MXB | 5962-01-260-8680 | microcircuit memory | Avl | RFQ |
5962-3829409MXA | 5962-01-260-8680 | microcircuit memory | Avl | RFQ |
5962-38294 | 5962-01-260-8680 | microcircuit memory | Avl | RFQ |
415-2454 | 5962-01-260-8680 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012608680
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.610 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.232 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 21 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 125.00 MILLIAMPERES MAXIMUM SUPPLY |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 3.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | RAM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |