NSN 5962-01-250-6216 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-250-6216 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012506216 |
| NCB Code: USA (01) |
| Manufacturers: General Dynamics Information Systems , General Dynamics Mission Systems , Philips Semiconductors Inc , Northrop Grumman Systems Corporation , Dla Land And Maritime , Advanced Micro Devices Inc , Intersil Corporation |
Manufacturer's List for NSN 5962-01-250-6216, 5962012506216
Part Number Related To NSN 5962-01-250-6216, 5962012506216
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 57846700-01 | 5962-01-250-6216 | microcircuit memory | Avl | RFQ |
| 57846700-02 | 5962-01-250-6216 | microcircuit memory | Avl | RFQ |
| 57955400 | 5962-01-250-6216 | microcircuit memory | Avl | RFQ |
| 82S16 BEA | 5962-01-250-6216 | microcircuit memory | Avl | RFQ |
| 839050-0014 | 5962-01-250-6216 | microcircuit memory | Avl | RFQ |
| 839050-014 | 5962-01-250-6216 | microcircuit memory | Avl | RFQ |
| 86023 | 5962-01-250-6216 | microcircuit memory | Avl | RFQ |
| 8602301EA | 5962-01-250-6216 | microcircuit memory | Avl | RFQ |
| 8602301EB | 5962-01-250-6216 | microcircuit memory | Avl | RFQ |
| 8602301EX | 5962-01-250-6216 | microcircuit memory | Avl | RFQ |
| AM270059E | 5962-01-250-6216 | microcircuit memory | Avl | RFQ |
| AM27LS00 BEA | 5962-01-250-6216 | microcircuit memory | Avl | RFQ |
| IM5523ACDE | 5962-01-250-6216 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012506216
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.875 INCHES NOMINAL |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 660.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND MONOLITHIC AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 120.00 MILLIAMPERES NOMINAL TOTAL SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 14933-86023 DRAWING THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWIN |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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