NSN 5962-01-247-5648 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-247-5648 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012475648 |
| NCB Code: USA (01) |
| Manufacturers: Nimikkeistokeskus Ncb Finland , Rockwell Collins Aerospace , Hamilton Sundstrand Corporation , Dla Land And Maritime , Cypress Semiconductor Corporatio , Intersil Corporation , Integrated Device Technology Inc , Stmicroelectronics Inc , Agh Industries Inc |
Manufacturer's List for NSN 5962-01-247-5648, 5962012475648
Part Number Related To NSN 5962-01-247-5648, 5962012475648
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 10133968 | 5962-01-247-5648 | microcircuit memory | Avl | RFQ |
| 258-9000-150 | 5962-01-247-5648 | microcircuit memory | Avl | RFQ |
| 351-5643-020 | 5962-01-247-5648 | microcircuit memory | Avl | RFQ |
| 5R8061-200-0001 | 5962-01-247-5648 | microcircuit memory | Avl | RFQ |
| 84036 | 5962-01-247-5648 | microcircuit memory | Avl | RFQ |
| 8403603JA | 5962-01-247-5648 | microcircuit memory | Avl | RFQ |
| 8403603JB | 5962-01-247-5648 | microcircuit memory | Avl | RFQ |
| 8403603JX | 5962-01-247-5648 | microcircuit memory | Avl | RFQ |
| CS1905AT | 5962-01-247-5648 | microcircuit memory | Avl | RFQ |
| HM1 65162C 883 | 5962-01-247-5648 | microcircuit memory | Avl | RFQ |
| IDT6116SA120DM | 5962-01-247-5648 | microcircuit memory | Avl | RFQ |
| MKB6116LJ-83 | 5962-01-247-5648 | microcircuit memory | Avl | RFQ |
| MKB6116LP-83 | 5962-01-247-5648 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012475648
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.150 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | 6660-01-153-1269 CLOUD HEIGHT SE |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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