NSN 5962-01-228-0135 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-228-0135 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012280135 |
| NCB Code: USA (01) |
| Manufacturers: Intel Corp , Raytheon Systems Ltd , Advanced Micro Devices Inc , Leonardo Mw Ltd , Datametrics Corporation , Rugged Information Technology , Raytheon Company , Northrop Grumman Systems Corporation |
Manufacturer's List for NSN 5962-01-228-0135, 5962012280135
| intel corp | raytheon systems ltd | advanced micro devices inc |
| leonardo mw ltd | datametrics corporation | rugged information technology |
| raytheon company | northrop grumman systems corporation |
Part Number Related To NSN 5962-01-228-0135, 5962012280135
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| MD8155H B | 5962-01-228-0135 | microcircuit memory | Avl | RFQ |
| MD8155 B | 5962-01-228-0135 | microcircuit memory | Avl | RFQ |
| MD102D20100S | 5962-01-228-0135 | microcircuit memory | Avl | RFQ |
| AM8155DM-B | 5962-01-228-0135 | microcircuit memory | Avl | RFQ |
| 999 4 43076 206 | 5962-01-228-0135 | microcircuit memory | Avl | RFQ |
| 760010-001 | 5962-01-228-0135 | microcircuit memory | Avl | RFQ |
| 760010-001 | 5962-01-228-0135 | microcircuit memory | Avl | RFQ |
| 72-00906-107 | 5962-01-228-0135 | microcircuit memory | Avl | RFQ |
| 7141485-1 | 5962-01-228-0135 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012280135
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 2.030 INCHES MINIMUM AND 2.080 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.5 WATTS |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HIGH PERFORMANCE AND W/ENABLE AND W/RESET AND HERMETICALLY SEALED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 35 INPUT |
| CRHL | BIT QUANTITY | 2048 |
| CSWJ | WORD QUANTITY | 256 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| TTQY | TERMINAL TYPE AND QUANTITY | 40 PRINTED CIRCUIT |
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