NSN 5962-01-215-3359 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-215-3359 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012153359 |
| NCB Code: USA (01) |
| Manufacturers: Philips Semiconductors Inc , Dla Land And Maritime , Raytheon Company |
Manufacturer's List for NSN 5962-01-215-3359, 5962012153359
Part Number Related To NSN 5962-01-215-3359, 5962012153359
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| S82S123 883B | 5962-01-215-3359 | microcircuit memory | Avl | RFQ |
| ROM/PROM FAMILY 013 | 5962-01-215-3359 | microcircuit memory | Avl | RFQ |
| G268898-301 | 5962-01-215-3359 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012153359
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.785 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.302 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.175 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.3 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | PROGRAMMABLE AND 3-STATE OUTPUT AND MONOLITHIC |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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