NSN 5962-01-206-1981 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-206-1981 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012061981 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Military Specifications , Kaman Aerospace Corporation |
Manufacturer's List for NSN 5962-01-206-1981, 5962012061981
Part Number Related To NSN 5962-01-206-1981, 5962012061981
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| ROM PROM FAMILY 029 | 5962-01-206-1981 | microcircuit memory | Avl | RFQ |
| M38510/21002BJA | 5962-01-206-1981 | microcircuit memory | Avl | RFQ |
| 998203-0261 | 5962-01-206-1981 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012061981
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | SCHOTTKY AND BIPOLAR AND PROGRAMMED AND 3-STATE OUTPUT AND W/ACTIVE PULL-UP AND LOW BIAS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 185.00 MILLIAMPERES MAXIMUM SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | PROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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